MOSFET INVERSION LAYER CAPACITANCE MODEL-BASED ON FERMI-DIRAC STATISTICS FOR WIDE TEMPERATURE-RANGE

Authors
CHEN K ZHANG G DUSTER J HU CM HUANG JH LIU ZH KO PK
Citation
K. Chen et al., MOSFET INVERSION LAYER CAPACITANCE MODEL-BASED ON FERMI-DIRAC STATISTICS FOR WIDE TEMPERATURE-RANGE, Solid-state electronics, 41(3), 1997, pp. 507-509
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
3
Year of publication
1997
Pages
507 - 509
Database
ISI
SICI code
0038-1101(1997)41:3<507:MILCMO>2.0.ZU;2-G