Ct. Chou et al., SURFACE RELAXATION OF STRAINED HETEROSTRUCTURES REVEALED BY BRAGG LINE SPLITTING IN LACBED PATTERNS, Ultramicroscopy, 55(3), 1994, pp. 334-347
Bragg line splitting near the shadow image of a thin strained InGaAs l
ayer, buried in GaAs and without strain relief by misfit dislocations,
was found in large angle convergent beam electron diffraction (LACBED
) patterns of cross-section specimens. The surface relaxation of the b
uilt-in strain and the Bragg line intensities were calculated. A quali
tative agreement between the experimental Bragg line splitting and the
theoretical calculations is demonstrated. Closer matching was achieve
d using a ''line-force'' model of the surface relaxation, whereas a Fo
urier transform solution showed significant underestimation of the Bra
gg line splitting. The possibility of characterising the built-in stra
in in thin strained layers, by measuring this Bragg line splitting in
LACBED patterns, has been explored.