SURFACE RELAXATION OF STRAINED HETEROSTRUCTURES REVEALED BY BRAGG LINE SPLITTING IN LACBED PATTERNS

Citation
Ct. Chou et al., SURFACE RELAXATION OF STRAINED HETEROSTRUCTURES REVEALED BY BRAGG LINE SPLITTING IN LACBED PATTERNS, Ultramicroscopy, 55(3), 1994, pp. 334-347
Citations number
27
Categorie Soggetti
Microscopy
Journal title
ISSN journal
03043991
Volume
55
Issue
3
Year of publication
1994
Pages
334 - 347
Database
ISI
SICI code
0304-3991(1994)55:3<334:SROSHR>2.0.ZU;2-2
Abstract
Bragg line splitting near the shadow image of a thin strained InGaAs l ayer, buried in GaAs and without strain relief by misfit dislocations, was found in large angle convergent beam electron diffraction (LACBED ) patterns of cross-section specimens. The surface relaxation of the b uilt-in strain and the Bragg line intensities were calculated. A quali tative agreement between the experimental Bragg line splitting and the theoretical calculations is demonstrated. Closer matching was achieve d using a ''line-force'' model of the surface relaxation, whereas a Fo urier transform solution showed significant underestimation of the Bra gg line splitting. The possibility of characterising the built-in stra in in thin strained layers, by measuring this Bragg line splitting in LACBED patterns, has been explored.