ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM

The damage to modulation-doped pseudomorphic SiGe channels was investi gated for a typical 40 keV electron beam lithography resist technique and also a high resolution 300 keV direct write SiO2 patterning techni que. Annealing studies on the irradiated samples were also performed. Results show that the 40 keV technique only creates insignificant amou nts of surface damage while the 300 keV technique creates significant damage even at deep, strained SiGe quantum wells. Annealing can be use d to reduce the 40 keV damage but has little effect on the 300 keV dam age. A number of narrow channel devices were fabricated to assess the range of the 300 keV damage.