THERMAL-ANALYSIS OF PHOTORESISTS IN AID OF LITHOGRAPHIC PROCESS-DEVELOPMENT

Authors
TEGOU E GOGOLIDES E HATZAKIS M
Citation
E. Tegou et al., THERMAL-ANALYSIS OF PHOTORESISTS IN AID OF LITHOGRAPHIC PROCESS-DEVELOPMENT, Microelectronic engineering, 35(1-4), 1997, pp. 141-144
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
141 - 144
Database
ISI
SICI code
0167-9317(1997)35:1-4<141:TOPIAO>2.0.ZU;2-F
Abstract
A methodology is presented using thermal analysis to aid lithographic process development and/or photoresist evaluation. The temperature ran ges of the reactions occurring in the photoresist film during baking c ycles, and the apparent glass transition temperatures (T-g) of the fil ms are determined, and used for prebake and post-exposure bake optimis ation. The methodology is applied for several commercial photoresists, namely UVIII, XP 90166*, EPR*, and AZ 5214*, for which optimum bakin g temperature ranges are determined.