G. Patsis et al., GEL FORMATION THEORY APPROACH FOR THE MODELING OF NEGATIVE CHEMICALLYAMPLIFIED E-BEAM RESISTS, Microelectronic engineering, 35(1-4), 1997, pp. 157-160
Gel formation theory is applied for the interpretation of experimental
lithographic results of epoxy based negative e-beam resists. The succ
ess of different theoretical models in fitting experiments depends upo
n the value of concentration of the photoacid generator (PAG) and the
thermal processing conditions. The chemical composition of each specif
ic system, the sensitivity and the range of acid diffusion are importa
nt parameters in the analysis. It is concluded that existing theories
with an appropriate interpretation explain satisfactorily experimental
results in a given range of resist composition and processing paramet
ers. However in some cases a model which would include more explicitly
the reaction-diffusion mechanism is required.