Holographic lithography and near-field holography (NFH) used to print
gratings in the manufacture of DFB lasers are limited in the quality o
f the resist profiles due to the effects of vertical standing waves oc
curring within the photoresist layer. We report on various attempts to
produce improved grating profiles in photoresist which can thereby di
rectly serve as dry etch masks for transferring gratings into semicond
uctors. Trials include both thin dielectric layers as well as bottom a
ntireflection coatings (BARC's) to mitigate interference effects. We s
how that among these, a bilayer BARC/photoresist method is both practi
cal and can greatly improve resist profiles.