IMPRINT LITHOGRAPHY WITH SUB-10 NM FEATURE SIZE AND HIGH-THROUGHPUT

Nanoimprint lithography, a high-throughput, low-cost, nonconventional lithographic method proposed and demonstrated recently, has been devel oped and investigated. Nanoimprint lithography has demonstrated 10 nm feature size, 40 nm pitch, vertical and smooth sidewalls, and nearly 9 0 degrees corners. Further experimental study indicates that the ultim ate resolution of nanoimprint lithography could be sub-10 nm, the impr int process is repeatable, and the mold is durable. In addition, unifo rmity over a 15 mm by 18 mm area was demonstrated and the uniformity a rea can be much larger if a better designed press is used. Nanoimprint lithography over a non-flat surface has also been achieved. Finally, nanoimprint lithography has been successfully used for fabricating nan oscale photodetectors, silicon quantum-dot, quantum-wire, and ring tra nsistors.