MAGNETIC TUNNEL-JUNCTIONS FABRICATED AT 10TH-MICRON DIMENSIONS BY ELECTRON-BEAM LITHOGRAPHY

Authors
RISHTON SA LU Y ALTMAN RA MARLEY AC BIAN XP JAHNES C VISWANATHAN R XIAO G GALLAGHER WJ PARKIN SSP
Citation
Sa. Rishton et al., MAGNETIC TUNNEL-JUNCTIONS FABRICATED AT 10TH-MICRON DIMENSIONS BY ELECTRON-BEAM LITHOGRAPHY, Microelectronic engineering, 35(1-4), 1997, pp. 249-252
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
249 - 252
Database
ISI
SICI code
0167-9317(1997)35:1-4<249:MTFA1D>2.0.ZU;2-0
Abstract
Magnetic tunnel junctions consisting of permalloy and cobalt thin film electrodes, separated by a thin aluminum oxide tunnel barrier, have b een fabricated by e-beam lithography at dimensions down to 120 nanomet ers. The devices are fabricated by sputter deposition and ion milling. They exhibit magnetoresistances of up to 22% at room temperature. Evi dence of individual domain switching is observed. The smaller junction s have resistances in the kilohm range, which are easily measured, lea ding to the possibility of sensing and microelectronic applications.