SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS

Excellent improvement in the hole transport properties for SiGe hetero structures promises symmetric, higher speed, and lower power consumpti on circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buff er have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 mu m down to 0.1 mu m A reco rd unity current gain cutoff frequency f(T) of 70 GHz was obtained for 0.1 mu m gate-length devices.