Mjc. Vandenhomberg et al., FABRICATION OF SUBMICRON SINGLE-CRYSTALLINE AND BAMBOO AL LINES BY RECRYSTALLIZATION, Microelectronic engineering, 35(1-4), 1997, pp. 277-280
We have developed a process for the fabrication of single-crystalline
and bamboo Al lines by recrystallization. A groove pattern of submicro
meter dimensions is fabricated into an oxide layer by electron-beam-li
thography and reactive-ion-etching. Blanket Al sputter deposition and
heating, led to melting and subsequent filling of the grooves. The mic
rostructure of the Al was examined with Backscatter Kikuchi Diffractio
n (BKD) and TEM. The presence of an in-plane temperature gradient duri
ng heating and cooling had a profound influence on the microstructure
of the resolidified Al lines. The lines fabricated without a temperatu
re gradient were 'bamboo' and had the common (111) fiber texture. Thos
e fabricated with a temperature gradient were 'distorted' single-cryst
als. Both types of lines have a low resistivity, indicating a high pur
ity. The lines are electromigration lifetime-tested at 200 degrees C a
nd with a current density of 2 or 8 MA/cm(2). After 1800 hrs, one of t
he 15 single-crystalline lines had failed. Two out of the 7 bamboo lin
es had failed. In these two, facetted voids were observed.