FABRICATION OF SUBMICRON SINGLE-CRYSTALLINE AND BAMBOO AL LINES BY RECRYSTALLIZATION

Citation
Mjc. Vandenhomberg et al., FABRICATION OF SUBMICRON SINGLE-CRYSTALLINE AND BAMBOO AL LINES BY RECRYSTALLIZATION, Microelectronic engineering, 35(1-4), 1997, pp. 277-280
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
277 - 280
Database
ISI
SICI code
0167-9317(1997)35:1-4<277:FOSSAB>2.0.ZU;2-J
Abstract
We have developed a process for the fabrication of single-crystalline and bamboo Al lines by recrystallization. A groove pattern of submicro meter dimensions is fabricated into an oxide layer by electron-beam-li thography and reactive-ion-etching. Blanket Al sputter deposition and heating, led to melting and subsequent filling of the grooves. The mic rostructure of the Al was examined with Backscatter Kikuchi Diffractio n (BKD) and TEM. The presence of an in-plane temperature gradient duri ng heating and cooling had a profound influence on the microstructure of the resolidified Al lines. The lines fabricated without a temperatu re gradient were 'bamboo' and had the common (111) fiber texture. Thos e fabricated with a temperature gradient were 'distorted' single-cryst als. Both types of lines have a low resistivity, indicating a high pur ity. The lines are electromigration lifetime-tested at 200 degrees C a nd with a current density of 2 or 8 MA/cm(2). After 1800 hrs, one of t he 15 single-crystalline lines had failed. Two out of the 7 bamboo lin es had failed. In these two, facetted voids were observed.