AFM-BASED FABRICATION OF LATERAL SINGLE-ELECTRON TUNNELING STRUCTURESFOR ELEVATED-TEMPERATURE OPERATION

Authors
MONTELIUS L JUNNO T CARLSSON SB SAMUELSON L
Citation
L. Montelius et al., AFM-BASED FABRICATION OF LATERAL SINGLE-ELECTRON TUNNELING STRUCTURESFOR ELEVATED-TEMPERATURE OPERATION, Microelectronic engineering, 35(1-4), 1997, pp. 281-284
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
281 - 284
Database
ISI
SICI code
0167-9317(1997)35:1-4<281:AFOLST>2.0.ZU;2-7
Abstract
In this paper we will report a method that allows controlled positioni ng of individual nanoparticles between e-beam defined metal electrodes using AFM technique, having not only the imaging capability in the AF M for inspection of the positioning, but also in-situ electrical monit oring of the assembly procedure. This means that an electrical signal is recorded when an electrical link between the lateral metal electrod es, via the positioned particles, is established.