FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS

Authors
WAKAYA F YANAGISAWA J MATSUBARA T NAKAYAMA H YUBA Y TAKAOKA S GAMO K
Citation
F. Wakaya et al., FABRICATION OF BURIED QUANTUM STRUCTURES USING FIB-MBE TOTAL VACUUM PROCESS, Microelectronic engineering, 35(1-4), 1997, pp. 451-454
Citations number
17
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
451 - 454
Database
ISI
SICI code
0167-9317(1997)35:1-4<451:FOBQSU>2.0.ZU;2-E
Abstract
In order to fabricate buried quantum structures using a total vacuum s ystem which consists of low-energy focused ion beam and molecular beam epitaxy systems, the effects of growth interruption, passivation by A s layers on GaAs and annealing after growth are investigated experimen tally using delta-doping technique in the GaAs. It is found that the a nnealing at 800 degrees C for 10 s is not effective in reducing the in terface states. It is concluded that the passivation by As layer is us eful for the reduction of shallow interface state.