FABRICATION OF MSM DETECTOR STRUCTURES ON SILICON BY FOCUSED ION-BEAMIMPLANTATION

Authors
TEICHERT J BISCHOFF L HAUSMANN S
Citation
J. Teichert et al., FABRICATION OF MSM DETECTOR STRUCTURES ON SILICON BY FOCUSED ION-BEAMIMPLANTATION, Microelectronic engineering, 35(1-4), 1997, pp. 455-458
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
455 - 458
Database
ISI
SICI code
0167-9317(1997)35:1-4<455:FOMDSO>2.0.ZU;2-J
Abstract
We report the fabrication of metal-semiconducror-metal (MSM) photo det ectors on silicon substrates with CoSi2 electrodes. The electrode patt erns have been formed by ion beam synthesis applying maskless implanta tion with a cobalt focused ion beam. Implantation has been carried out with the substrate at room temperature and at 400 degrees C.