We have designed and constructed a projection electron beam lithograph
y system based on the SCALPEL (SCattering with Angular Limitation in P
rojection Electron beam Lithography) principle. The experimental tool
was built to analyze the efficacy of this approach as an alternative t
o photolithography for future integrated circuit manufacturing. In thi
s paper we will describe the design of the system and show preliminary
results of test pattern exposures. We will show printed features down
to 0.08 mu m as well as lithographic properties, such as depth of foc
us, which has been measured at 75 mu m for 0.25 mu m lines and spaces.