D. Baker et al., MANUFACTURABLE DUV LITHOGRAPHY PROCESSES FOR 0.25-MU-M TECHNOLOGY CONTACT AND VIA LAYERS, Microelectronic engineering, 35(1-4), 1997, pp. 517-522
One of the critical applications of DUV (248nm) lithography for 0.25 m
u m technology is the imaging of contact and via holes. The goal of th
is work was to demonstrate and verify manufacturing process capability
for imaging 0.25 mu m design rule (300 nm) contacts and vias for inte
gration into an existing process flow, including exposure on a first g
eneration (NA=0.50, sigma=0.51) production capable DUV stepper. Furthe
rmore, a simulation study was carried out to estimate the optimised op
tical parameters for a next generation stepper with variable NA and Si
gma. Finally, process latitudes for sub-300 nm contacts were measured
and an estimate of minimum manufacturable contact sizes using conventi
onal DUV lithography was made.