MANUFACTURABLE DUV LITHOGRAPHY PROCESSES FOR 0.25-MU-M TECHNOLOGY CONTACT AND VIA LAYERS

Citation
D. Baker et al., MANUFACTURABLE DUV LITHOGRAPHY PROCESSES FOR 0.25-MU-M TECHNOLOGY CONTACT AND VIA LAYERS, Microelectronic engineering, 35(1-4), 1997, pp. 517-522
Citations number
2
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
35
Issue
1-4
Year of publication
1997
Pages
517 - 522
Database
ISI
SICI code
0167-9317(1997)35:1-4<517:MDLPF0>2.0.ZU;2-U
Abstract
One of the critical applications of DUV (248nm) lithography for 0.25 m u m technology is the imaging of contact and via holes. The goal of th is work was to demonstrate and verify manufacturing process capability for imaging 0.25 mu m design rule (300 nm) contacts and vias for inte gration into an existing process flow, including exposure on a first g eneration (NA=0.50, sigma=0.51) production capable DUV stepper. Furthe rmore, a simulation study was carried out to estimate the optimised op tical parameters for a next generation stepper with variable NA and Si gma. Finally, process latitudes for sub-300 nm contacts were measured and an estimate of minimum manufacturable contact sizes using conventi onal DUV lithography was made.