The fabrication of X-ray masks may leave a nonuniform stress distribut
ion in the membrane, thus leading to placement errors when the circuit
pattern is transferred to the device wafer. In general, these intrins
ic errors include magnification. Additionally, other extrinsic effects
can introduce independent distortions. One of the possible extrinsic
sources of distortion is the temperature distribution within the membr
ane resulting from the energy absorbed from the X-rays. The physical p
rocess during exposure needs to be carefully analyzed in order to cont
rol and minimize error during pattern transfer.