LOW-TEMPERATURE EPITAXIAL DEPOSITION OF ZNS ONTO (100)SI BY RF MAGNETRON SPUTTERING AND MOLECULAR-BEAM EPITAXY

Single-crystal ZnS is deposited epitaxially onto (100)Si for the first time by RF magnetron sputtering as well as by molecular beam epitaxy. This is achieved using a novel, non-chemical, Si surface cleaning met hod which involved growing and then removing a thin layer of ZnS to re move the native SiO(2)layer found on Si surfaces. X-ray diffraction ev aluation indicates epitaxial growth occurring for films grown above 22 0 degrees C.