COMPOSITION PROFILES OF (HG,CD)TE LIQUID-PHASE EPITAXY LAYERS GROWN FROM TE-RICH SOLUTION

The paper presents a theoretical model enabling numerical calculation of composition profiles in liquid phase epitaxial Hg1-xCdxTe layers gr own from semi-infinite Te-rich solutions. The layers x less than or eq ual to 0.3 were grown on CdTe substrates, in a two-zone, semiclosed sy stem in which Hg leakage was eliminated. The model combines two mechan isms which cause the appearance of a concentration gradient in the epi taxial layers-non-constant temperature crystallization of three-compou nd solid solution and interdiffusion between substrate and growing lay er. It is applicable to the following standard liquid phase epitaxy gr owth techniques: step cooling, supercooling and equilibrium cooling.