ELECTRICAL MEASUREMENTS AS EARLY INDICATORS OF ELECTROMIGRATION FAILURE

Authors
JONES BK XU YZ DENTON TC ZOBBI P
Citation
Bk. Jones et al., ELECTRICAL MEASUREMENTS AS EARLY INDICATORS OF ELECTROMIGRATION FAILURE, Microelectronics and reliability, 35(1), 1995, pp. 13-25
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
35
Issue
1
Year of publication
1995
Pages
13 - 25
Database
ISI
SICI code
0026-2714(1995)35:1<13:EMAEIO>2.0.ZU;2-I
Abstract
Detailed results and analysis are given of several electrical paramete rs measured, at room temperature, at intervals during electromigration stress of Al 4% Cu specimens. The trends of the resistance, second ha rmonic and electrical noise changes are good indicators of the degrada tion until near the end of the life when the specimen becomes very var iable in its properties