1 F NOISE SOURCES

Authors
HOOGE FN
Citation
Fn. Hooge, 1 F NOISE SOURCES, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 1926-1935
Citations number
56
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
11
Year of publication
1994
Pages
1926 - 1935
Database
ISI
SICI code
0018-9383(1994)41:11<1926:1FNS>2.0.ZU;2-Y
Abstract
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an alpha value with a m agnitude in the order of 10(-4). Damaging the crystal has a strong inf luence on alpha, alpha may increase by orders of magnitude. Some theor etical models are briefly discussed; none of them can explain all expe rimental results. The alpha values of several semiconductors are given . These values can be used in calculations of 1/f noise in devices.