FLUCTUATIONS AND NOISE OF HOT CARRIERS IN SEMICONDUCTOR-MATERIALS ANDDEVICES

After recalling the definition of the noise temperature, the macroscop ic expressions for noise sources are shown not to be specific to hot c arrier regime, although depending on the electric field strength. Care ful modeling allow to get important information on transport parameter s from noise measurements. The microscopic noise source expressions, v ia the transition rates, give a unified view of the noise sources. In particular, it is clearly evidenced that noise sources are intercorrel ated, and that there is also space correlations over lengths of a few mean free paths. Recent developments are reviewed as concerning noise modeling using direct numerical methods of resolution of the Boltzmann equation. Finally impedance field methods for modeling noise of devic es are briefly evoked.