INFLUENCE OF AL CONTENT-X ON HOT-ELECTRON NOISE IN ALX GA1-XAS N- COMPARISON WITH GAAS(NN+ DEVICES )

Authors
DEMURCIA M RICHARD E VANBREMEERSCH J ZIMMERMANN J
Citation
M. Demurcia et al., INFLUENCE OF AL CONTENT-X ON HOT-ELECTRON NOISE IN ALX GA1-XAS N- COMPARISON WITH GAAS(NN+ DEVICES ), I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2082-2086
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
11
Year of publication
1994
Pages
2082 - 2086
Database
ISI
SICI code
0018-9383(1994)41:11<2082:IOACOH>2.0.ZU;2-5
Abstract
Hot electron noise measurements are performed in Si doped AlxGa1-xAs n + nn+ devices, for three different Al concentrations: x = 0.15, 0.2, 0 .25. Noise temperatures are obtained using a pulsed measurement techni que as functions of electric field and frequency. Longitudinal diffusi on coefficients D(E) are deduced at 4 GHz. Results are analyzed throug h the scattering mechanisms which greatly affect the electron velocity properties of AlxGa1-xAs materials. Comparisons with n+ nn+ GaAs devi ces are made.