A. Ohata et al., A STUDY OF QUANTUM INTERFERENCE FLUCTUATIONS IN DEEP SUB-MU-M MOSFETSUNDER CRYOGENIC CONDITIONS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2107-2111
We investigated the phase coherence length, l(phi), in large Si-MOSFET
's fabricated using current process technology, with a particular emph
asis on highly doped silicon substrates, and then studied the effects
of quantum conductance fluctuations in deep sub-mum MOSFET's, with cha
nnel length comparable to l(phi). We identified, in a 0.2 mum MOSFET,
universal conductance fluctuations in the strong inversion regime and
conductance fluctuations due to variable range hopping in the weak inv
ersion regime. The drain bias dependence of these fluctuations indicat
es clearly that they become a serious concern only at drain voltages l
ower than 10 mV. Therefore, even if the wave nature of electrons resul
ts in quantum conductance fluctuations, it will not lead to a limitati
on on device miniaturization in future Si-ULSI's.