IN-SITU OBSERVATIONS OF GE(001) AND GE SI(001) USING LOW-ENERGY ION-SCATTERING/

Low-energy ion scattering (LEIS) angular distributions were measured o n Ge(001)-1X1-O and Ge(001)-2X1+1x2 surfaces. The intensity of 105 deg rees backscattered ions and neutrals from 3 keV Ar+ primary ions incid ent at 45 degrees were recorded as a function of the surface azimuthal angle. The major symmetry directions of the Ge surface were Observed. A 14.2 keV Na+ pulsed beam incident at 72.5 degrees with direct recoi led atoms detected by time of flight (TOF) at an angle of 25 degrees w as used to determine the levels of elemental contaminants' oil the Ge( 001) surface at different stages of annealing. TOF-LEIS of backscatter ed 3 keV Ne+ was used to monitor, in ''real time,'' Ge deposition on S i(001) at room temperature.