Lh. Chua et al., INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3033-3039
Citations number
25
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The interaction of hydrogen with a chemical vapor deposition (CVD) dep
osited polycrystalline film on Si(100), cleaned by heating to 1500 K,
has been examined. No adsorption is observed unless prior activation w
ith a hot filament is carried out. However atomic H thereby created is
found to adsorb with a high sticking probability, subsequently desorb
ing in the temperature range 1100-1225 K. Etching of the diamond surfa
ce, producing gaseous methane and ethane is also seen. The reactivity
patterns are rather similar to-those observed on C(100) and C(111) sur
faces, suggesting these are suitable model substrates for the study of
reaction mechanisms associated with CVD diamond growth. However, a ma
jor difference is also seen in that a mixture of hydrogen, silane, and
disilane, with other minority species, is seen to evolve from the sur
face of the CVD diamond film at 1275 K when exposed to the reacting ga
s and is not detected from single-crystal diamond surfaces. The result
s indicate that this arises from the selective etching of Si present a
t grain boundaries in the deposited films.