COMPOSITION EFFECTS IN FLASH EVAPORATED CUIN(SEXTE1-X)(2) FILMS

Thin films with composition around CuInSeTe and CuInSe1.5Te0.5 have be en deposited by ''flash'' evaporation. The structural, electrical, opt ical, and surface [x-ray photoelectron spectroscopy (XPS) measurements ] properties have been determined. Chalcogen content is always lower t han 50% and crystallinity is higher when Se content increases. The sam ples always show p-type conduction even when the defect of chalcogen i s 5% with resistivities in the 0.5-8.6 Omega cm range. The energy gap is in the 0.81-1.11 eV range. XPS measurements indicate that, after ex posure to air, only the Te species presents two oxidation states preve nting oxidation of the remaining elements. These properties are analyz ed in terms of indium segregation at grain boundaries, anion vacancies , and cation disorder in the samples.