USE OF SILICON OXYNITRIDE AS A GRAPHITE MOLD RELEASING COATING FOR THE GROWTH OF SHAPED MULTICRYSTALLINE SILICON-CRYSTALS

Citation
P. Prakash et al., USE OF SILICON OXYNITRIDE AS A GRAPHITE MOLD RELEASING COATING FOR THE GROWTH OF SHAPED MULTICRYSTALLINE SILICON-CRYSTALS, Journal of crystal growth, 144(1-2), 1994, pp. 41-47
Citations number
10
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
144
Issue
1-2
Year of publication
1994
Pages
41 - 47
Database
ISI
SICI code
0022-0248(1994)144:1-2<41:UOSOAA>2.0.ZU;2-X
Abstract
A new process of preparation of shaped multicrystalline silicon ingots in graphite molds based on the directional solidification technique i s reported. The mold has a coating of silicon oxynitride instead of mo re commonly used silicon nitride on the inner side of its walls. The c oating acts as a mold releasing layer and makes the mold reusable. It also enables to use of demountable molds made by assembling two or mor e parts together. It is expected that the repeatable use of molds made of graphite sheets will be able to promote a considerable savings in the production cost of multicrystalline silicon ingots in industrial p ractice.