P. Prakash et al., USE OF SILICON OXYNITRIDE AS A GRAPHITE MOLD RELEASING COATING FOR THE GROWTH OF SHAPED MULTICRYSTALLINE SILICON-CRYSTALS, Journal of crystal growth, 144(1-2), 1994, pp. 41-47
A new process of preparation of shaped multicrystalline silicon ingots
in graphite molds based on the directional solidification technique i
s reported. The mold has a coating of silicon oxynitride instead of mo
re commonly used silicon nitride on the inner side of its walls. The c
oating acts as a mold releasing layer and makes the mold reusable. It
also enables to use of demountable molds made by assembling two or mor
e parts together. It is expected that the repeatable use of molds made
of graphite sheets will be able to promote a considerable savings in
the production cost of multicrystalline silicon ingots in industrial p
ractice.