DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS

Authors
AARIK J AIDLA A KUKLI K UUSTARE T
Citation
J. Aarik et al., DEPOSITION AND ETCHING OF TANTALUM OXIDE-FILMS IN ATOMIC LAYER EPITAXY PROCESS, Journal of crystal growth, 144(1-2), 1994, pp. 116-119
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
144
Issue
1-2
Year of publication
1994
Pages
116 - 119
Database
ISI
SICI code
0022-0248(1994)144:1-2<116:DAEOTO>2.0.ZU;2-L
Abstract
Effects of the reactor temperature and TaCl5-precursor dose on the ato mic layer epitaxy (ALE) growth of tantalum oxide films are studied. It is shown that etching takes place instead of growth when high TaCl5 d oses are used. The etching rate is enhanced by increase of the reactor temperature. In the case of optimum precursor doses, a growth rate eq ual to 0.06 nm per cycle was obtained at 300 degrees C growth temperat ure.