PSEUDOPOTENTIAL CALCULATIONS ON 3C-SIC

Authors
AOURAG H DJELOULI B HAZZAB A KHELIFA B
Citation
H. Aourag et al., PSEUDOPOTENTIAL CALCULATIONS ON 3C-SIC, Materials chemistry and physics, 39(1), 1994, pp. 34-39
Citations number
20
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
39
Issue
1
Year of publication
1994
Pages
34 - 39
Database
ISI
SICI code
0254-0584(1994)39:1<34:PCO3>2.0.ZU;2-9
Abstract
The pressure dependence of the direct and indirect band gaps and the e lectronic charge densities in cubic SiC are calculated by using an adj usted local pseudopotential method. The results for the pressure are i n excellent agreement with the experimental values. The charge density results are discussed in terms of the ionicity of SiC.