W. Kung et A. Nathan, TEMPERATURE-COEFFICIENT OF RESOLUTION OF LATERAL BIPOLAR MAGNETOTRANSISTORS, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 910-917
We present measurement results of the temperature coefficient (TC) of
magnetic field resolution B(min) for dual-collector lateral bipolar ma
gnetotransistors over a temperature range 273 K less-than-or-equal-to
T less-than-or-equal-to 373 K. For a bandwidth of 500 Hz centered arou
nd 750 Hz, the resolution turns out to be 600 nT at room temperature w
ith a TC of +2.3 x 10(-3)/K. With the magnetotransistor (MT) operating
in medium injection, there is very little dependence of B(min) on bia
s conditions. In this regime, the correlation (GAMMA) between collecto
r noise currents is the highest (near unity), where the forward curren
t gain beta of the MT is at its maximum. At higher injection levels, a
degradation in GAMMA is observed, possibly due to emitter crowding ef
fects, behaving in a manner similar to beta. The degree of coherence a
ppears to be dependent on frequency; GAMMA is higher at low frequencie
s where the base 1/f noise predominates and GAMMA degrades at higher f
requencies when white noise levels from the collector epi region becom
e significant.