MODEL FOR THE ANOMALOUS OFF-CURRENT OF POLYSILICON THIN-FILM TRANSISTORS AND DIODES

Due to the different crystallographic orientations of the grains in po lysilicon thin films, their grain boundaries exhibit a high density of crystallographic defects that are often electrically active. Applying the equations of the transitions between different defect energy leve ls to a simple junction theory, the qualitative and, to a certain exte nt, quantitative characteristic trends of the reverse current of such defected junctions can be explained. This constitutes an important mod eling method of a problem that still exists in the use of polysilicon thin-film transistors for certain applications.