ADVANCED ELECTRICAL-LEVEL MODELING OF EEPROM CELLS

Conventional modeling of floating-gate EEPROM cells is shown to be ina dequate to correctly evaluate the tunnel current flowing through the M OS injector during programming, essentially because of relevant quantu m phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating nu merical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circ uit simulator SPICE.