0.1-MU-M-GATE, ULTRATHIN-FILM CMOS DEVICES USING SIMOX SUBSTRATE WITH80-NM-THICK BURIED OXIDE LAYER
Citation
Y. Omura et al., 0.1-MU-M-GATE, ULTRATHIN-FILM CMOS DEVICES USING SIMOX SUBSTRATE WITH80-NM-THICK BURIED OXIDE LAYER, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 1019-1022
SICI code
0018-9383(1993)40:5<1019:0UCDUS>2.0.ZU;2-J
Abstract
A 0.1-mum-gate CMOS/SIMOX is fabricated using high-quality SIMOX subst
rates with a sub-100-nm-thick buried oxide layer. In addition, 0.085-m
um-gate nMOSFET's/SIMOX and pMOSFET's/SIMOX with 8-nm-thick silicon ac
tive layers have been fabricated. The prospects for improving the perf
ormance of 0.1-mum-gate CMOS/SIMOX devices are discussed in detail.
