TEMPERATURE FORMATION OF STRUCTURAL DEFECTS IN THE INTERFACE OF GAAS SCHOTTKY-BARRIER

Possible defects originating in the interface of GaAs Schottky barrier s have been considered. Three types of imperfections, such as clusters , metal microphases, and extended dislocation defects, have been recog nized after intentional thermal treatment of the samples. It has been shown that those defects may affect strongly the Schottky barrier heig ht, and thus, the idea of an effective work function [J. M. Woodall an d J. L. Freeout, J. Vac. Sci. Technol. 21, 578 (1982)] has been suppor ted. By deep-level transient spectroscopy spectra simulation, characte ristic broadening and shifting of the experimental spectra have been e xplained to be due to dislocation defects. A model has been proposed o f defect formation which may act as a possible limit of metal-insulato r semiconductor field effect transistor operation at high temperatures .