MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE

Magnetron reactive ion etching (MIE) of GaAs has been investigated usi ng BCl3 as the etch gas. Etch rates are determined as a function of ap plied power density (0.16-0.80 W/cm2) and chamber pressure (2-6 mTorr) . Patterned GaAs samples were etched anisotropically and exhibited smo oth surfaces, with no indication of residues on surfaces or sidewalls. Transmission electron microscope measurements were performed to deter mine etch induced wafer damage. Schottky diode measurements on etched surfaces revealed minimal degradation of surface region electrical pro perties. Our results show that (MIE) in BCl3 is an attractive processi ng technique for GaAs device fabrication.