Gf. Mclane et al., MAGNETRON REACTIVE ION ETCHING OF GAAS IN A BCL3 DISCHARGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 333-336
Magnetron reactive ion etching (MIE) of GaAs has been investigated usi
ng BCl3 as the etch gas. Etch rates are determined as a function of ap
plied power density (0.16-0.80 W/cm2) and chamber pressure (2-6 mTorr)
. Patterned GaAs samples were etched anisotropically and exhibited smo
oth surfaces, with no indication of residues on surfaces or sidewalls.
Transmission electron microscope measurements were performed to deter
mine etch induced wafer damage. Schottky diode measurements on etched
surfaces revealed minimal degradation of surface region electrical pro
perties. Our results show that (MIE) in BCl3 is an attractive processi
ng technique for GaAs device fabrication.