D. Nicolaescu, PHYSICAL BASIS FOR APPLYING THE FOWLER-NORDHEIM J-E RELATIONSHIP TO EXPERIMENTAL IV DATA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 392-395
The purpose of this work is to show that the Fowler-Nordheim (FN) curr
ent-voltage (I-V) plot [log(I/V2) as a function of 1/V] must be treate
d, on principle, as nonlinear. The cause of this behavior is outlined
to be the fact that the electric field and current density are not con
stant over the emitter's surface. Traditional approach of the FN I-V p
lot as being linear may lead to physical contradictions. These contrad
ictions are brought into light. A field emitter model is then develope
d, which allows to express in closed analytical equations the above st
atements. Expressions for field enhancement factor, area factor and al
so for the I-V relationship are obtained. The FN I-V plot nonlineariti
es are shown to be greater for smaller voltages. Within this model, th
e FN I-V plot can be taken as quasilinear, under some assumptions. Sug
gestions for technological parameter extraction from I-V data through
nonlinear or linear least-squares optimization techniques are done.