PHYSICAL BASIS FOR APPLYING THE FOWLER-NORDHEIM J-E RELATIONSHIP TO EXPERIMENTAL IV DATA

Authors
Citation
D. Nicolaescu, PHYSICAL BASIS FOR APPLYING THE FOWLER-NORDHEIM J-E RELATIONSHIP TO EXPERIMENTAL IV DATA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 392-395
Citations number
17
ISSN journal
10711023
Volume
11
Issue
2
Year of publication
1993
Pages
392 - 395
Database
ISI
SICI code
1071-1023(1993)11:2<392:PBFATF>2.0.ZU;2-3
Abstract
The purpose of this work is to show that the Fowler-Nordheim (FN) curr ent-voltage (I-V) plot [log(I/V2) as a function of 1/V] must be treate d, on principle, as nonlinear. The cause of this behavior is outlined to be the fact that the electric field and current density are not con stant over the emitter's surface. Traditional approach of the FN I-V p lot as being linear may lead to physical contradictions. These contrad ictions are brought into light. A field emitter model is then develope d, which allows to express in closed analytical equations the above st atements. Expressions for field enhancement factor, area factor and al so for the I-V relationship are obtained. The FN I-V plot nonlineariti es are shown to be greater for smaller voltages. Within this model, th e FN I-V plot can be taken as quasilinear, under some assumptions. Sug gestions for technological parameter extraction from I-V data through nonlinear or linear least-squares optimization techniques are done.