EMISSION CHARACTERISTICS OF METAL-OXIDE SEMICONDUCTOR ELECTRON-TUNNELING CATHODE

Authors
YOKOO K TANAKA H SATO S MUROTA J ONO S
Citation
K. Yokoo et al., EMISSION CHARACTERISTICS OF METAL-OXIDE SEMICONDUCTOR ELECTRON-TUNNELING CATHODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 429-432
Citations number
4
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
2
Year of publication
1993
Pages
429 - 432
Database
ISI
SICI code
1071-1023(1993)11:2<429:ECOMSE>2.0.ZU;2-K
Abstract
We have fabricated a metal-oxide-semiconductor (MOS) electron tunnelin g cathode with ultrathin SiO2 and examined the emission characteristic s. We found that the emission occurred from an entire gate area by ele ctron tunneling through the potential barrier in the MOS diode and the emission current was 0.7% of the total current flowing through the di ode. The emission was also found to be nearly independent of pressure.