GROWTH OF ALLOY SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY - THEORETICAL CONSIDERATIONS

The liquid phase electroepitaxial (LPEE) growth of large diameter, com positionally uniform and low dislocation density ingots of alloy semic onductors, suitable as substrates for device fabrication, is considere d. In this regard, the main scientific tasks; (i) generation, propagat ion and multiplication of dislocations in bulk alloy semiconductors du e to composition variations and alloy/substrate lattice mismatch and ( ii) the effect of convection in the melt on the growth interface stabi lity and structural perfection of bulk alloy semiconductors, are discu ssed in detail. Finally, the most efficient means of achieving (i) low dislocation density alloys by employing lateral LPEE overgrowth on pa rtially masked binary substrates, and (ii) large diameter alloys by em ploying LPEE growth in a static magnetic field of reasonable strength, are identified.