CHARACTERIZATION OF ALXGA1-XAS ALYGA1-YAS/GAAS STEP MULTIQUANTUM WELLS ON (001) GAAS BY X-RAY DOUBLE-CRYSTAL DIFFRACTION/

The structure and quality of AlxGa1-xAs/AlyGa1-yAs/GaAs step multi-qua ntum wells grown by molecular beam epitaxy on (001) GaAs substrates ha ve been studied by means of X-ray double crystal diffraction. We demon strate that for such a complicated structure it is necessary to consid er the influence of beam flux variations on layer thickness and compos ition in order to obtain good agreement between theoretical calculated rocking curves and their experimental counterparts. As a result, the structural parameters were simply determined, and the information abou t the beam flux variation was obtained. Such results may explain the d ifference between the design structure and that obtained.