PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF A1N (10(1)OVER-BAR-0) ONSI (100) - MICROSTRUCTURAL STUDY OF THE INTERLAYERS

Polycrystalline (1010BAR) and amorphous AlN thin films have been synth esized by plasma-enhanced chemical vapour deposition (PECVD) at low (3 5 and 440 kHz) and high (13.56 MHz) frequency on silicon single crysta l wafers. High resolution transmission electron microscopy (HRTEM) has been used to confirm the presence of crystallites oriented (1010BAR) perpendicularly to the (100) silicon surface. Three different types of structure are identified from silicon to AlN bulk. The first zone is a weak amorphous interlayer on which has grown a polycrystalline layer with small misoriented crystallites and finally, the bulk which displ ays larger and well-oriented crystallites. The chemical composition of the AlN/Si interlayer is investigated by Auger electron spectroscopy from the effect of an in situ silicon surface plasma-cleaning nitrogen .