CDTE(111) GROWTH ON MISORIENTED SI(100) SUBSTRATES BY HOT-WALL EPITAXY

CdTe(111) layers were grown directly on misoriented Si(100) substrates by hot-wall epitaxy. The structure and crystallinity of the layer wer e examined by reflection high-energy electron diffraction (RHEED), etc h-pit observation and X-ray diffraction measurements. The strain in th e layer was investigated by X-ray Bond method. The layers on misorient ed Si(100) substrates are composed of twinned domains elongated parall el to the misoriented direction of the substrates. A 5 mum thick layer was deformed by biaxial tensile stress by the difference between ther mal expansion coefficients of CdTe and Si. The strain is relaxed as th e layer thickness increases.