REGROWTH OF INP BY MOVPE ON DRY-ETCHED HETEROSTRUCTURES OF INP-GAINASP

The MOVPE growth behavior of InP on masked and dry-etched ridges in In P/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy . It is found that the orientation of the ridges is critical for obtai ning good planarization. For ridges oriented along the [110] direction , the growth is uniform and defect-free, leading to a plane surface. I n the orthogonal [110] direction, 60-degrees twins are nucleated adjac ent to the walls of the ridge. The resultant high density of (111)/(00 1) facets enhances the growth rate in these regions, leading to projec ting walls at the sides of the ridge.