SURFACE-EMITTING DEVICES WITH DISTRIBUTED BRAGG REFLECTORS GROWN BY HIGHLY PRECISE MOLECULAR-BEAM EPITAXY

Authors
SUGIMOTO M OGURA I SAITO H YASUDA A KURIHARA K KOSAKA H NUMAI T KASAHARA K
Citation
M. Sugimoto et al., SURFACE-EMITTING DEVICES WITH DISTRIBUTED BRAGG REFLECTORS GROWN BY HIGHLY PRECISE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 1-4
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
1 - 4
Database
ISI
SICI code
0022-0248(1993)127:1-4<1:SDWDBR>2.0.ZU;2-W
Abstract
We realized extremely high absolute thickness controllability around /-0.3% in molecular beam epitaxy growth of distributed Bragg reflector s, using a modified reflection high energy electron diffraction oscill ation measurement technique. Very low threshold current density and hi gh efficiency were obtained in InGaAs/AlGaAs surface emitting lasers b y using this technique and a new periodically doped distributed Bragg reflectors.