OPTIMIZED STRAINED INXGA1-XAS STRUCTURES FOR DEVICE APPLICATION

Strained InGaAs/(AlGa)As quantum wells were grown on GaAs by molecular beam epitaxy for optimized device performance. Pseudomorphic growth, i.e., absence of relaxation and misfit dislocations, is conclusively v erified by X-ray diffraction with asymmetric reflexes. Narrow photolum inescence linewidths and pronounced satellite peaks in symmetric diffr action geometry, usually taken as evidence for lateral lattice matchin g, do not suffice. Growth and structure parameters for pseudomorphic d evices will be given.