MBE GROWTH OF GAAS P-N-JUNCTION LEDS ON (111)A GAAS SUBSTRATES USING ONLY SILICON DOPANT

GaAs LEDs were fabricated on (111)A GaAs substrates using a p-n struct ure grown with controlled all-Si doping. Cathodoluminescence spectra a nd I-V characteristics for these samples confirmed p-n structures. The peak intensity of the sample's emission spectrum was equivalent to th at of the sample grown using Be as the p-type dopant. As the forward c urrent was increased, the intensity increased without a peak shift, wh ich was observed in the Be-doped sample. A SIMS study of Si or Be diff usion in the p-type layer using a delta-doped GaAs layer suggests that the peak shift is caused by Be diffusion.