REALIZATION OF HIGH-PERFORMANCE DOPED-CHANNEL MISFETS IN HIGHLY STRAINED ALGAAS INGAAS/ALGAAS BASED QUANTUM-WELLS/

Doped channel metal-insulator-semiconductor field effect transistors ( DC-MISFETs) in the highly strained AlxGa1-xAs/In0.26Ga0.74As/AlyGa1-yA s (0 < x, y less-than-or-equal-to 1.0) and ((AlAs)m(GaAs)n)/In0.26Ga0. 74As/((AlAs)p(GaAs)q) single quantum wells grown via MBE on GaAs (100) substrates have been examined with a view towards improved performanc e via control of growth using RHEED behavior of static and dynamic sur faces. Breakdown voltages over 20 V and over 40 V have been realized i n structures containing AlGaAs alloy and equivalent Al content short p eriod superlattice (SPSL) barriers, respectively. Low gate leakage cur rents and output conductance as low as 150 muS/mm have been realized. Increasing the In content to 30% and using heavy Si doping in the well , DC-MISFETs containing SPSL barriers have yielded drain currents of 1 .2 A/mm and breakdown voltages of approximately 10 V.