MBE-GROWN VERTICAL SILICON MOSFETS WITH SUB-0.3 MU-M CHANNEL LENGTHS

Authors
KIUNKE W HAMMERL E EISELE I
Citation
W. Kiunke et al., MBE-GROWN VERTICAL SILICON MOSFETS WITH SUB-0.3 MU-M CHANNEL LENGTHS, Journal of crystal growth, 127(1-4), 1993, pp. 73-75
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
73 - 75
Database
ISI
SICI code
0022-0248(1993)127:1-4<73:MVSMWS>2.0.ZU;2-3
Abstract
Two techniques for the local epitaxy of silicon have been investigated : (1) a mask is mechanically positioned in front of the wafer during M BE growth, or (2) a shadow mask is deposited onto the substrate and pa tterned by a photolithographic process prior to MBE. With both methods vertical MOSFETs with channel length below 0.3 mum have been fabricat ed.