HIGH-PERFORMANCE MBE OF (IN)GAAS ALGAAS HETEROSTRUCTURES FOR HEMTS/

High quality (In)GaAs/AlGaAs HEMT layers were grown with a long-term r eproducibility of +/- 1%. The control of growth rates and doping level s is based on calibration layers and the predictable behaviour of the effusion sources. Lateral homogeneity of the heterostructures grown on 3 inch epiready substrates is about +/- 1% with respect to layer thic kness, alloy composition and doping. Defect density is routinely below 100 cm-2. Low noise GaAs/AlGaAs HEMTs (gate length 0.3 mum) fabricate d from these epilayers using optical lithography, selective dry etchin g and full dielectric passivation reveal excellent device characterist ics (noise figures at 12 GHz and 0.60 dB (on wafer: gain 10 dB); 0.75 dB (in commercial ceramic package: gain 11 dB)).