MBE-GAAS ON SI, COMPARISON BETWEEN 2 GAAS CRYSTAL ORIENTATIONS ON VICINAL SI(100) SURFACE

Authors
MEI XB HUANG Q ZHOU JM
Citation
Xb. Mei et al., MBE-GAAS ON SI, COMPARISON BETWEEN 2 GAAS CRYSTAL ORIENTATIONS ON VICINAL SI(100) SURFACE, Journal of crystal growth, 127(1-4), 1993, pp. 102-106
Citations number
8
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
127
Issue
1-4
Year of publication
1993
Pages
102 - 106
Database
ISI
SICI code
0022-0248(1993)127:1-4<102:MOSCB2>2.0.ZU;2-B
Abstract
We report several initial growth procedures to obtain the two GaAs cry stal orientations (type A and B) on vicinal Si (100) surface. The RHEE D and STM studies reveal that the initial GaAs islands are long strips and the major axes of each type are normal to each other. The results of PLS and X-ray diffraction are presented and discussed in order to compare the material qualities of type A and B.