GAAS ALGAAS PIN MQW STRUCTURES GROWN ON PATTERNED SI-SUBSTRATES/

We report structural and optical studies of a pin MQW structure grown on a patterned Si substrate. We find that a high density of microcrack s in the [110] directions are formed on the plain area of the substrat e but that these are almost totally absent on the patterned areas. Pho toluminescence measurements show a shift of QW emission to higher ener gies as island size is reduced with little change in intensity. These results show that good quality MQW device structures with reduced stra in and freedom from microcracks can be grown on patterned Si.